STMicroelectronics STripFET F7 Type N-Channel MOSFET, 100 A, 60 V Enhancement, 3-Pin TO-263 STB100N6F7
- RS Stock No.:
- 906-4668
- Mfr. Part No.:
- STB100N6F7
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 5 units)*
SGD16.01
(exc. GST)
SGD17.45
(inc. GST)
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In Stock
- Plus 2,850 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD3.202 | SGD16.01 |
| 50 - 195 | SGD3.042 | SGD15.21 |
| 200 - 995 | SGD2.892 | SGD14.46 |
| 1000 - 1995 | SGD2.75 | SGD13.75 |
| 2000 + | SGD2.614 | SGD13.07 |
*price indicative
- RS Stock No.:
- 906-4668
- Mfr. Part No.:
- STB100N6F7
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | STripFET F7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.6mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12.6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Width | 9.35 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series STripFET F7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.6mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12.6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.4mm | ||
Height 4.6mm | ||
Width 9.35 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for Faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Related links
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