N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1

RS Stock No.:: 906-4296P
Mfr. Part No.:: BSC028N06NSATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON Infineon BSC028N06NSATMA1

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Subtotal (5 reels of 10 units)**. Quantities below 150 on continuous strip

SGD125.60

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SGD136.90

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Units	Per unit
50 - 240	SGD2.437
250 - 490	SGD2.364
500 - 1240	SGD2.293
1250 +	SGD2.225

**price indicative

RS Stock No.:: 906-4296P
Mfr. Part No.:: BSC028N06NSATMA1
Manufacturer:: Infineon

Infineon OptiMOS™5 Power MOSFETs

Infineon OptiMOS™ 5 Series MOSFET, 137A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - BSC028N06NSATMA1

This high-power MOSFET is suitable for applications where efficiency and reliability are essential. With a maximum continuous drain current of 137A and a breakdown voltage of 60V, it is well-suited for power management systems, making it an excellent choice for professionals in automation and electronics. Its enhanced gate threshold voltage range promotes precise switching performance, ensuring effective operation in various environments.

Features & Benefits

• Supports high-power applications with a maximum power dissipation of 100W
• Low RDS(on) of 4.2mΩ for improved efficiency
• N-channel configuration for enhanced performance
• TDSON package for effective thermal management
• Minimum operating temperature of -55°C, ideal for extreme conditions
• Avalanche rated for durability under transient conditions

Applications

• Utilised in synchronous rectification circuits for power supplies
• Suitable for electric vehicles and industrial automation
• Applied in switch-mode power supplies for effective energy conversion
• Used in UPS systems for dependable power backup solutions
• Appropriate for DC-DC converters and inverters in renewable energy systems

What is the suitable temperature range for operation?

It operates effectively within a temperature range of -55°C to +150°C, accommodating diverse environmental conditions.

How does this component handle thermal management?

The device's TDSON package optimises thermal resistance, ensuring efficient heat dissipation during operation.

What gate voltage is required for optimal performance?

The maximum gate-source voltage is ±20V, while the gate threshold voltage ranges from 2.1V to 3.3V, facilitating effective drive conditions.

Can it be used in high-frequency switching applications?

Yes, it is designed with dynamic characteristics that support high-frequency switching, making it suitable for modern electronic designs.

What safeguards are in place against electrical overstress?

It is validated for industrial applications and fully avalanche tested, providing assurance against transient surges in electrical demand.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	137 A
Maximum Drain Source Voltage	60 V
Package Type	TDSON
Series	OptiMOS™ 5
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	4.2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.3V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	100 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.1mm
Width	5.35mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Transistor Material	Si
Forward Diode Voltage	1.2V
Height	1.1mm
Minimum Operating Temperature	-55 °C