Wolfspeed N-Channel MOSFET, 19 A, 1.2 kV Enhancement, 3-Pin TO-247 C2M0160120D

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SGD26.09

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SGD28.44

(inc. GST)

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Units
Per unit
1 - 9SGD26.09
10 - 49SGD25.58
50 - 99SGD25.07
100 - 499SGD24.58
500 +SGD20.20

*price indicative

Packaging Options:
RS Stock No.:
904-7348
Mfr. Part No.:
C2M0160120D
Manufacturer:
Wolfspeed
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Brand

Wolfspeed

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

19A

Maximum Drain Source Voltage Vds

1.2kV

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

196mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

3.9V

Maximum Power Dissipation Pd

125W

Maximum Gate Source Voltage Vgs

-5V, +20V

Maximum Operating Temperature

150°C

Length

16.13mm

Height

21.1mm

Width

5.21mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Wolfspeed Silicon Carbide Power MOSFETs


Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

• Enhancement-mode N-channel SiC technology

• High Drain-Source breakdown voltages - up to 1200V

• Multiple devices are easy to parallel and simple to drive

• High speed switching with low on-resistance

• Latch-up resistant operation

MOSFET Transistors, Wolfspeed


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