N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 Infineon IPP111N15N3GXKSA1

RS Stock No.:: 897-7412
Mfr. Part No.:: IPP111N15N3GXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 83 A, 150 V, 3-Pin TO-220 Infineon IPP111N15N3GXKSA1

This image is representative of the product range

Temporarily out of stock - back order for despatch 11/02/2025, delivery within 4 working days from despatch date

Added

Price Each (In a Pack of 4)

SGD7.183

(exc. GST)

SGD7.829

(inc. GST)

Units	Per unit	Per Pack*
4 - 16	SGD7.183	SGD28.732
20 - 76	SGD6.968	SGD27.872
80 - 196	SGD6.76	SGD27.04
200 - 396	SGD6.555	SGD26.22
400 +	SGD6.358	SGD25.432
*price indicative

RS Stock No.:: 897-7412
Mfr. Part No.:: IPP111N15N3GXKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

Product Details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	83 A
Maximum Drain Source Voltage	150 V
Series	OptiMOS 3
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	11.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	214 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.36mm
Width	4.57mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	41 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	15.95mm