Toshiba TK Type N-Channel MOSFET, 72 A, 120 V Enhancement, 3-Pin TO-220 TK72E12N1,S1X(S
- RS Stock No.:
- 896-2436
- Mfr. Part No.:
- TK72E12N1,S1X(S
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD10.83
(exc. GST)
SGD11.805
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 30 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD2.166 | SGD10.83 |
| 15 - 70 | SGD2.112 | SGD10.56 |
| 75 + | SGD2.058 | SGD10.29 |
*price indicative
- RS Stock No.:
- 896-2436
- Mfr. Part No.:
- TK72E12N1,S1X(S
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 72A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | TK | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 225W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.45 mm | |
| Length | 10.16mm | |
| Height | 15.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 72A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series TK | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 225W | ||
Maximum Operating Temperature 150°C | ||
Width 4.45 mm | ||
Length 10.16mm | ||
Height 15.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 120 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 120 V EnhancementS1X(S
- Toshiba TK Type N-Channel MOSFET 80 V EnhancementS4X(S
- Toshiba TK Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Toshiba TK Type N-Channel MOSFET 100 V EnhancementS1X(S