N-Channel MOSFET, 10.6 A, 550 V, 3-Pin TO-220 Infineon IPP50R380CEXKSA1
- RS Stock No.:
- 892-2267
- Mfr. Part No.:
- IPP50R380CEXKSA1
- Manufacturer:
- Infineon
30 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 10)
SGD1.729
(exc. GST)
SGD1.885
(inc. GST)
| Units | Per unit | Per Pack* |
| 10 - 10 | SGD1.729 | SGD17.29 |
| 20 - 40 | SGD1.692 | SGD16.92 |
| 50 - 90 | SGD1.656 | SGD16.56 |
| 100 - 190 | SGD1.621 | SGD16.21 |
| 200 + | SGD1.587 | SGD15.87 |
| *price indicative | ||
- RS Stock No.:
- 892-2267
- Mfr. Part No.:
- IPP50R380CEXKSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon CoolMOS™ CE Power MOSFET
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 10.6 A |
| Maximum Drain Source Voltage | 550 V |
| Series | CoolMOS CE |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 380 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.5V |
| Minimum Gate Threshold Voltage | 2.5V |
| Maximum Power Dissipation | 73 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 24.8 nC @ 10 V |
| Width | 4.57mm |
| Length | 10.36mm |
| Transistor Material | Si |
| Minimum Operating Temperature | -55 °C |
| Height | 15.95mm |
| Forward Diode Voltage | 0.85V |