Toshiba TK N-Channel MOSFET, 11.1 A, 650 V, 3-Pin TO-220SIS TK11A65W,S5X(M
- RS Stock No.:
- 891-2875
- Mfr. Part No.:
- TK11A65W,S5X(M
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD9.14
(exc. GST)
SGD9.965
(inc. GST)
FREE delivery for orders over $150.00, or create a business account to enjoy free delivery from just $28.00
In Stock
- Plus 25 unit(s) shipping from 17 November 2025
- Plus 155 unit(s) shipping from 24 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.828 | SGD9.14 |
| 25 - 120 | SGD1.79 | SGD8.95 |
| 125 - 245 | SGD1.734 | SGD8.67 |
| 250 - 495 | SGD1.694 | SGD8.47 |
| 500 + | SGD1.656 | SGD8.28 |
*price indicative
- RS Stock No.:
- 891-2875
- Mfr. Part No.:
- TK11A65W,S5X(M
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11.1 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | TK | |
| Package Type | TO-220SIS | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 390 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 35 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Length | 10mm | |
| Forward Diode Voltage | 1.7V | |
| Height | 15mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.1 A | ||
Maximum Drain Source Voltage 650 V | ||
Series TK | ||
Package Type TO-220SIS | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 390 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 35 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 25 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Length 10mm | ||
Forward Diode Voltage 1.7V | ||
Height 15mm | ||
- COO (Country of Origin):
- MY
MOSFET Transistors, Toshiba
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