N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK STMicroelectronics STB33N65M2
- RS Stock No.:
- 876-5626P
- Mfr. Part No.:
- STB33N65M2
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
SGD92.30
(exc. GST)
SGD100.60
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 25 - 95 | SGD3.692 |
| 100 - 245 | SGD3.362 |
| 250 - 495 | SGD3.036 |
| 500 + | SGD2.93 |
*price indicative
- RS Stock No.:
- 876-5626P
- Mfr. Part No.:
- STB33N65M2
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 41.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.35mm | |
| Length | 10.4mm | |
| Forward Diode Voltage | 1.6V | |
| Height | 4.6mm | |
| Series | MDmesh M2 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 41.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 9.35mm | ||
Length 10.4mm | ||
Forward Diode Voltage 1.6V | ||
Height 4.6mm | ||
Series MDmesh M2 | ||
- COO (Country of Origin):
- CN