N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK STMicroelectronics STB33N65M2

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Packaging Options:
RS Stock No.:
876-5626P
Mfr. Part No.:
STB33N65M2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Width

9.35mm

Typical Gate Charge @ Vgs

41.5 nC @ 10 V

Number of Elements per Chip

1

Length

10.4mm

Series

MDmesh M2

Height

4.6mm

Forward Diode Voltage

1.6V

COO (Country of Origin):
CN

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