N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STMicroelectronics STB80NF55-08T4
- RS Stock No.:
- 829-4051P
- Mfr. Part No.:
- STB80NF55-08T4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
SGD56.75
(exc. GST)
SGD61.75
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit |
|---|---|
| 25 - 95 | SGD2.27 |
| 100 - 245 | SGD2.224 |
| 250 - 495 | SGD2.178 |
| 500 + | SGD1.806 |
*price indicative
- RS Stock No.:
- 829-4051P
- Mfr. Part No.:
- STB80NF55-08T4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Typical Gate Charge @ Vgs | 112 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Series | STripFET II | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 9.35mm | ||
Typical Gate Charge @ Vgs 112 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Series STripFET II | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
Related links
- STMicroelectronics Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 STB80NF55-06T4
- STMicroelectronics Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 STP80NF55-06
- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263 STB80NF55L-06T4
- STMicroelectronics STripFET F3 Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 STD65N55F3
- STMicroelectronics STripFET II Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263