N-Channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA Microchip DN3535N8-G

RS Stock No.:: 829-3354
Mfr. Part No.:: DN3535N8-G
Manufacturer:: Microchip

N-Channel MOSFET, 230 mA, 350 V Depletion, 4-Pin TO-243AA Microchip DN3535N8-G

This image is representative of the product range

Temporarily out of stock - back order for despatch 06/06/2024, delivery within 4 working days from despatch date

Added

Price Each (In a Pack of 10)

SGD1.264

(exc. GST)

SGD1.378

(inc. GST)

Units	Per unit	Per Pack*
10 - 20	SGD1.264	SGD12.64
30 - 40	SGD1.145	SGD11.45
50 - 90	SGD1.066	SGD10.66
100 +	SGD1.055	SGD10.55
*price indicative

RS Stock No.:: 829-3354
Mfr. Part No.:: DN3535N8-G
Manufacturer:: Microchip

Technical data sheets

Legislation and Compliance

Product Details

Supertex N-Channel Depletion Mode MOSFET Transistors

The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.

Features

High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage

Typical Applications

Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecoms

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Microchip

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	230 mA
Maximum Drain Source Voltage	350 V
Package Type	TO-243AA
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	10 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	1.6 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Length	4.6mm
Transistor Material	Si
Width	2.6mm
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.6mm