N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN Toshiba TK20J60W,S1VQ(O
- RS Stock No.:
- 827-6163
- Mfr. Part No.:
- TK20J60W,S1VQ(O
- Manufacturer:
- Toshiba
Bulk discount available
Subtotal (1 pack of 2 units)**
SGD25.54
(exc. GST)
SGD27.84
(inc. GST)
330 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Pack** |
|---|---|---|
| 2 - 8 | SGD12.77 | SGD25.54 |
| 10 - 38 | SGD10.985 | SGD21.97 |
| 40 - 98 | SGD10.67 | SGD21.34 |
| 100 - 198 | SGD10.505 | SGD21.01 |
| 200 + | SGD10.35 | SGD20.70 |
**price indicative
- RS Stock No.:
- 827-6163
- Mfr. Part No.:
- TK20J60W,S1VQ(O
- Manufacturer:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-3PN | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 155 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.7V | |
| Maximum Power Dissipation | 165 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 15.5mm | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 20mm | |
Select all | ||
|---|---|---|
Manufacturer Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-3PN | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 155 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.7V | ||
Maximum Power Dissipation 165 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 15.5mm | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 20mm | ||