DiodesZetex DMN Type N-Channel MOSFET, 380 mA, 30 V Enhancement, 3-Pin SC-89 DMN313DLT-7
- RS Stock No.:
- 827-0487
- Mfr. Part No.:
- DMN313DLT-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
SGD11.10
(exc. GST)
SGD12.10
(inc. GST)
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In Stock
- Plus 10,800 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | SGD0.111 | SGD11.10 |
| 200 - 400 | SGD0.104 | SGD10.40 |
| 500 - 900 | SGD0.099 | SGD9.90 |
| 1000 - 1900 | SGD0.098 | SGD9.80 |
| 2000 + | SGD0.097 | SGD9.70 |
*price indicative
- RS Stock No.:
- 827-0487
- Mfr. Part No.:
- DMN313DLT-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 380mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN | |
| Package Type | SC-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.5nC | |
| Maximum Power Dissipation Pd | 520mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Height | 0.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 380mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN | ||
Package Type SC-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.5nC | ||
Maximum Power Dissipation Pd 520mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Height 0.8mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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