Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

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Subtotal (1 pack of 50 units)*

SGD32.15

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SGD35.05

(inc. GST)

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  • 150 unit(s) ready to ship from another location
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Per unit
Per Pack*
50 - 50SGD0.643SGD32.15
100 - 200SGD0.629SGD31.45
250 - 450SGD0.61SGD30.50
500 - 950SGD0.592SGD29.60
1000 +SGD0.575SGD28.75

*price indicative

Packaging Options:
RS Stock No.:
826-9260
Mfr. Part No.:
BSP296NH6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

OptiMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.85V

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Length

6.5mm

Height

1.6mm

Standards/Approvals

No

Width

3.5 mm

Automotive Standard

AEC-Q101

Distrelec Product Id

304-44-413

Infineon OptiMOS™ Small Signal MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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