ROHM RUR040N02 Type N-Channel MOSFET, 4 A, 20 V Enhancement, 3-Pin TSMT RUR040N02TL
- RS Stock No.:
- 826-7813
- Mfr. Part No.:
- RUR040N02TL
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD16.68
(exc. GST)
SGD18.18
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 280 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 20 | SGD0.834 | SGD16.68 |
| 40 - 80 | SGD0.809 | SGD16.18 |
| 100 - 180 | SGD0.784 | SGD15.68 |
| 200 - 380 | SGD0.768 | SGD15.36 |
| 400 + | SGD0.752 | SGD15.04 |
*price indicative
- RS Stock No.:
- 826-7813
- Mfr. Part No.:
- RUR040N02TL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RUR040N02 | |
| Package Type | TSMT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Width | 1.6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RUR040N02 | ||
Package Type TSMT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Width 1.6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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