BSD840NH6327XTSA1 Dual N-Channel MOSFET, 880 mA, 20 V OptiMOS 2, 6-Pin SOT-363 Infineon

  • RS Stock No. 823-5493
  • Mfr. Part No. BSD840NH6327XTSA1
  • Manufacturer Infineon
Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 880 mA
Maximum Drain Source Voltage 20 V
Package Type SOT-363 (SC-88)
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 560 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 0.75V
Minimum Gate Threshold Voltage 0.3V
Maximum Power Dissipation 500 mW
Transistor Configuration Isolated
Maximum Gate Source Voltage -8 V, +8 V
Number of Elements per Chip 2
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 0.26 nC @ 2.5 V
Width 1.25mm
Height 0.8mm
Maximum Operating Temperature +150 °C
Series OptiMOS 2
Length 2mm
Transistor Material Si
850 In stock for delivery within 4 working days
Price Each (In a Pack of 50)
Was SGD0.57
SGD 0.491
(exc. GST)
SGD 0.525
(inc. GST)
units
Per unit
Per Pack*
50 - 50
SGD0.491
SGD24.55
100 - 200
SGD0.456
SGD22.80
250 - 450
SGD0.432
SGD21.60
500 - 950
SGD0.425
SGD21.25
1000 +
SGD0.42
SGD21.00
*price indicative
Packaging Options:
Related Products
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...
ON Semis PowerTrench® MOSFETS are optimised power switched ...
Description:
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in ...
PowerTrench® MOSFETs are optimised power switches that offer ...
Description:
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC ...