DiodesZetex DMN Type N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC DMN4800LSSL-13
- RS Stock No.:
- 823-3233
- Mfr. Part No.:
- DMN4800LSSL-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
SGD29.05
(exc. GST)
SGD31.65
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 2,250 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | SGD0.581 | SGD29.05 |
| 250 - 450 | SGD0.537 | SGD26.85 |
| 500 - 1200 | SGD0.498 | SGD24.90 |
| 1250 - 2450 | SGD0.465 | SGD23.25 |
| 2500 + | SGD0.436 | SGD21.80 |
*price indicative
- RS Stock No.:
- 823-3233
- Mfr. Part No.:
- DMN4800LSSL-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.94V | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.46W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.95 mm | |
| Length | 4.95mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.94V | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.46W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.95 mm | ||
Length 4.95mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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