DiodesZetex DMN Type N-Channel MOSFET, 3.1 A, 20 V Enhancement, 3-Pin SC-70 DMN2065UW-7
- RS Stock No.:
- 823-2930
- Mfr. Part No.:
- DMN2065UW-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 100 units)*
SGD21.70
(exc. GST)
SGD23.70
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 29,600 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | SGD0.217 | SGD21.70 |
| 200 - 400 | SGD0.206 | SGD20.60 |
| 500 - 900 | SGD0.151 | SGD15.10 |
| 1000 - 1900 | SGD0.135 | SGD13.50 |
| 2000 + | SGD0.127 | SGD12.70 |
*price indicative
- RS Stock No.:
- 823-2930
- Mfr. Part No.:
- DMN2065UW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Height 1mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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