N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

Bulk discount available

Price Each (In a Pack of 20)**

SGD0.754

(exc. GST)

SGD0.822

(inc. GST)

Stock check temporarily unavailable - call for stock availability

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
20 - 20	SGD0.754	SGD15.08
40 - 80	SGD0.571	SGD11.42
100 - 180	SGD0.487	SGD9.74
200 - 380	SGD0.422	SGD8.44
400 +	SGD0.414	SGD8.28

**price indicative

RS Stock No.:: 818-1441
Mfr. Part No.:: SIA416DJ-T1-GE3
Manufacturer:: Vishay

SiA416DJ, N-Channel 100V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.3 A
Maximum Drain Source Voltage	100 V
Package Type	PowerPAK SC-70
Series	ThunderFET
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	130 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.6V
Maximum Power Dissipation	19 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Length	2.15mm
Typical Gate Charge @ Vgs	6.5 nC @ 10 V
Width	2.15mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	0.75mm

N-Channel MOSFET, 11.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIA416DJ-T1-GE3

FREE delivery for orders over SGD250.00 (ex GST)

N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor

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