Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)

SGD1.411

(exc. GST)

SGD1.538

(inc. GST)

Temporarily out of stock - back order for despatch 17/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 90	SGD1.411	SGD14.11
100 - 190	SGD1.40	SGD14.00
200 - 590	SGD1.38	SGD13.80
600 - 1790	SGD1.319	SGD13.19
1800 +	SGD1.143	SGD11.43

**price indicative

RS Stock No.:: 818-1416
Mfr. Part No.:: SI7900AEDN-T1-GE3
Manufacturer:: Vishay

Si7900AEDN, Dual N-Channel 20V (D-S) MOSFET, Common Drain
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Number of Elements per Chip	2
Width	3.15mm
Maximum Operating Temperature	+150 °C
Length	3.15mm
Typical Gate Charge @ Vgs	10.5 nC @ 4.5 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	1.07mm

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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