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Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

RS Stock No.:: 818-1390
Mfr. Part No.:: SI7288DP-T1-GE3
Manufacturer:: Vishay

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD16.86

(exc. GST)

SGD18.38

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Last RS stock

Final 10,640 unit(s), ready to ship from another location

Units	Per unit	Per Pack*
10 - 10	SGD1.686	SGD16.86
20 - 40	SGD1.652	SGD16.52
50 - 90	SGD1.603	SGD16.03
100 - 190	SGD1.553	SGD15.53
200 +	SGD1.505	SGD15.05

*price indicative

RS Stock No.:: 818-1390
Mfr. Part No.:: SI7288DP-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SO-8
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	22mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	150°C
	Maximum Power Dissipation Pd	15.6W
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	-55°C
	Transistor Configuration	Isolated
	Width	5 mm
	Height	1.07mm
	Length	5.99mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 40V
	Package Type SO-8
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 22mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature 150°C
	Maximum Power Dissipation Pd 15.6W
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature -55°C
	Transistor Configuration Isolated
	Width 5 mm
	Height 1.07mm
	Length 5.99mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

COO (Country of Origin):: CN

Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8 SI7288DP-T1-GE3

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

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