Vishay IRFL Type N-Channel MOSFET, 960 mA, 200 V Enhancement, 4-Pin SOT-223 IRFL210TRPBF
- RS Stock No.:
- 815-2736
- Mfr. Part No.:
- IRFL210TRPBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD9.11
(exc. GST)
SGD9.93
(inc. GST)
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In Stock
- 1,690 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD0.911 | SGD9.11 |
| 100 - 490 | SGD0.845 | SGD8.45 |
| 500 - 1490 | SGD0.834 | SGD8.34 |
| 1500 - 2490 | SGD0.827 | SGD8.27 |
| 2500 + | SGD0.82 | SGD8.20 |
*price indicative
- RS Stock No.:
- 815-2736
- Mfr. Part No.:
- IRFL210TRPBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 960mA | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | SOT-223 | |
| Series | IRFL | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.1W | |
| Typical Gate Charge Qg @ Vgs | 8.2nC | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 960mA | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type SOT-223 | ||
Series IRFL | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.1W | ||
Typical Gate Charge Qg @ Vgs 8.2nC | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
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