Vishay SiHFBC30AS Type N-Channel MOSFET, 3.6 A, 600 V Enhancement, 3-Pin TO-263 SIHFBC30AS-GE3
- RS Stock No.:
- 815-2698
- Mfr. Part No.:
- SIHFBC30AS-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD24.90
(exc. GST)
SGD27.10
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 19 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.49 | SGD24.90 |
| 100 - 240 | SGD2.441 | SGD24.41 |
| 250 - 490 | SGD2.39 | SGD23.90 |
| 500 - 990 | SGD2.342 | SGD23.42 |
| 1000 + | SGD2.293 | SGD22.93 |
*price indicative
- RS Stock No.:
- 815-2698
- Mfr. Part No.:
- SIHFBC30AS-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.6A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | SiHFBC30AS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 74W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.6A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series SiHFBC30AS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 74W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SiHFBC30AS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-263
- Vishay IRFBC30A Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IRFBC30APBF
- Vishay IRFBC30 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IRFBC30PBF
- Vishay IRFBC30 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay IRFBC30A Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Vishay Si2304DDS Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2304DDS-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3
- Vishay TrenchFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23