N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3

RS Stock No.:: 815-2623
Mfr. Part No.:: SIHF630STRL-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)

SGD2.059

(exc. GST)

SGD2.244

(inc. GST)

Temporarily out of stock - back order for despatch 21/02/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
10 - 10	SGD2.059	SGD20.59
20 - 90	SGD1.998	SGD19.98
100 - 190	SGD1.957	SGD19.57
200 - 390	SGD1.829	SGD18.29
400 +	SGD1.714	SGD17.14

**price indicative

RS Stock No.:: 815-2623
Mfr. Part No.:: SIHF630STRL-GE3
Manufacturer:: Vishay

IRF630S, SiHF630S, Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	400 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	74 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.65mm
Length	10.67mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	43 nC @ 10 V
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.83mm

N-Channel MOSFET, 9 A, 200 V, 3-Pin D2PAK Vishay SIHF630STRL-GE3

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

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