Vishay Si1441EDH Type P-Channel MOSFET, 4 A, 20 V Enhancement, 6-Pin SC-70 SI1441EDH-T1-GE3
- RS Stock No.:
- 812-3079
- Mfr. Part No.:
- SI1441EDH-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 20 units)*
SGD10.94
(exc. GST)
SGD11.92
(inc. GST)
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- Shipping from 28 April 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 20 - 180 | SGD0.547 | SGD10.94 |
| 200 - 380 | SGD0.539 | SGD10.78 |
| 400 - 780 | SGD0.525 | SGD10.50 |
| 800 - 1580 | SGD0.497 | SGD9.94 |
| 1600 + | SGD0.444 | SGD8.88 |
*price indicative
- RS Stock No.:
- 812-3079
- Mfr. Part No.:
- SI1441EDH-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Series | Si1441EDH | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.8W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.2mm | |
| Width | 1.35 mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Series Si1441EDH | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.8W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.2mm | ||
Width 1.35 mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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