onsemi QFET Type P-Channel MOSFET, 1.33 A, 500 V Enhancement, 3-Pin TO-252 FQD3P50TM

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SGD14.16

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SGD15.43

(inc. GST)

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  • 40 unit(s) ready to ship from another location
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Per unit
Per Pack*
10 - 10SGD1.416SGD14.16
20 - 40SGD1.387SGD13.87
50 - 90SGD1.346SGD13.46
100 - 190SGD1.306SGD13.06
200 +SGD1.267SGD12.67

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Packaging Options:
RS Stock No.:
808-9010
Mfr. Part No.:
FQD3P50TM
Manufacturer:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

1.33A

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252

Series

QFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.9Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

18nC

Maximum Power Dissipation Pd

50W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.73mm

Height

2.39mm

Width

6.22 mm

Distrelec Product Id

304-45-656

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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