onsemi Type P-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin SOT-23 NTR1P02LT3G
- RS Stock No.:
- 808-0060
- Mfr. Part No.:
- NTR1P02LT3G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 200 units)*
SGD30.40
(exc. GST)
SGD33.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- 8,400 left, ready to ship from another location
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Units | Per unit | Per Tape* |
|---|---|---|
| 200 - 200 | SGD0.152 | SGD30.40 |
| 400 - 800 | SGD0.151 | SGD30.20 |
| 1000 - 1800 | SGD0.134 | SGD26.80 |
| 2000 - 3800 | SGD0.132 | SGD26.40 |
| 4000 + | SGD0.125 | SGD25.00 |
*price indicative
- RS Stock No.:
- 808-0060
- Mfr. Part No.:
- NTR1P02LT3G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Maximum Gate Source Voltage Vgs | ±12 V | |
| Typical Gate Charge Qg @ Vgs | 3.1nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Standards/Approvals | No | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Maximum Gate Source Voltage Vgs ±12 V | ||
Typical Gate Charge Qg @ Vgs 3.1nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Standards/Approvals No | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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