onsemi NVF6P02 Type P-Channel MOSFET, 8.4 A, 20 V Enhancement, 3-Pin SOT-223 NVF6P02T3G
- RS Stock No.:
- 805-1996
- Mfr. Part No.:
- NVF6P02T3G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 10 units)*
SGD13.68
(exc. GST)
SGD14.91
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- 3,420 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 20 | SGD1.368 | SGD13.68 |
| 30 - 40 | SGD1.317 | SGD13.17 |
| 50 + | SGD1.234 | SGD12.34 |
*price indicative
- RS Stock No.:
- 805-1996
- Mfr. Part No.:
- NVF6P02T3G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NVF6P02 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 8.3W | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.65mm | |
| Width | 3.7 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NVF6P02 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 8.3W | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.65mm | ||
Width 3.7 mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi NVF6P02 Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-223
- onsemi NTF6P02 Type P-Channel MOSFET 20 V Enhancement, 4-Pin SOT-223 NTF6P02T3G
- onsemi NTF6P02 Type P-Channel MOSFET 20 V Enhancement, 4-Pin SOT-223
- onsemi PowerTrench Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 FDD4685
- onsemi PowerTrench Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 40 V Enhancement, 3-Pin SOT-223
- Infineon ISP Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-223