IXYS HiperFET, Polar3 Type N-Channel MOSFET, 66 A, 600 V Enhancement, 4-Pin SOT-227

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SGD44.77

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SGD48.80

(inc. GST)

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  • Plus 162 unit(s) shipping from 01 June 2026
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Units
Per unit
1 - 9SGD44.77
10 - 49SGD44.73
50 - 99SGD44.69
100 - 249SGD37.29
250 +SGD37.19

*price indicative

RS Stock No.:
804-7603
Distrelec Article No.:
302-53-380
Mfr. Part No.:
IXFN80N60P3
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66A

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-227

Series

HiperFET, Polar3

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

70mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

960W

Typical Gate Charge Qg @ Vgs

190nC

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Length

38.23mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

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A wide range of advanced discrete Power MOSFET devices from IXYS

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