N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50Q3

RS Stock No.:: 804-7583
Mfr. Part No.:: IXFN80N50Q3
Manufacturer:: IXYS

N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50Q3

This image is representative of the product range

Price Each

SGD74.01

(exc. GST)

SGD80.67

(inc. GST)

Temporarily out of stock - back order for despatch 04/07/2025, delivery within 4 working days from despatch date*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit
1 +	SGD74.01

RS Stock No.:: 804-7583
Mfr. Part No.:: IXFN80N50Q3
Manufacturer:: IXYS

IXFN80N50Q3, HiperFET Power MOSFET Q3-Class, N-Channel Enhancement Mode Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	63 A
Maximum Drain Source Voltage	500 V
Series	HiperFET, Q3-Class
Package Type	SOT-227B
Mounting Type	Screw Mount
Pin Count	4
Maximum Drain Source Resistance	65 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	780 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Width	25.07mm
Transistor Material	Si
Typical Gate Charge @ Vgs	200 nC @ 10 V
Length	38.23mm
Height	9.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 63 A, 500 V, 4-Pin SOT-227 IXYS IXFN80N50Q3

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

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