onsemi MGSF1N03L Type N-Channel MOSFET, 2.1 A, 30 V Enhancement, 3-Pin SOT-23 MVGSF1N03LT1G
- RS Stock No.:
- 802-1954
- Mfr. Part No.:
- MVGSF1N03LT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD19.45
(exc. GST)
SGD21.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,175 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.778 | SGD19.45 |
| 50 - 100 | SGD0.762 | SGD19.05 |
| 125 - 225 | SGD0.74 | SGD18.50 |
| 250 - 475 | SGD0.718 | SGD17.95 |
| 500 + | SGD0.696 | SGD17.40 |
*price indicative
- RS Stock No.:
- 802-1954
- Mfr. Part No.:
- MVGSF1N03LT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.1A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | MGSF1N03L | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 145mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 690mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.1A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series MGSF1N03L | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 145mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 690mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 30V, ON Semiconductor
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