Nexperia Type N-Channel MOSFET, 100 A, 25 V Enhancement, 4-Pin SOT-669 PSMN1R2-25YLC,115
- RS Stock No.:
- 798-2902
- Mfr. Part No.:
- PSMN1R2-25YLC,115
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD9.36
(exc. GST)
SGD10.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 15 unit(s) shipping from 29 December 2025
- Plus 1,395 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | SGD1.872 | SGD9.36 |
| 10 - 20 | SGD1.802 | SGD9.01 |
| 25 - 45 | SGD1.752 | SGD8.76 |
| 50 - 95 | SGD1.742 | SGD8.71 |
| 100 + | SGD1.674 | SGD8.37 |
*price indicative
- RS Stock No.:
- 798-2902
- Mfr. Part No.:
- PSMN1R2-25YLC,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 179W | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.1 mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 179W | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.1 mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Automotive Standard No | ||
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Related links
- Nexperia Type N-Channel MOSFET 25 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 30 V Enhancement115
- Nexperia Type N-Channel MOSFET 25 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 40 V Enhancement, 4-Pin SOT-669
- Nexperia Type N-Channel MOSFET 40 V Enhancement115
- Nexperia Type N-Channel MOSFET 60 V Enhancement115