Toshiba TPC Type P-Channel MOSFET, 10 A, 30 V Enhancement, 8-Pin SOP TPC8125
- RS Stock No.:
- 796-5115
- Mfr. Part No.:
- TPC8125
- Manufacturer:
- Toshiba
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD4.45
(exc. GST)
SGD4.85
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 95 unit(s) shipping from 29 December 2025
- Plus 3,735 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD0.89 | SGD4.45 |
| 25 - 95 | SGD0.868 | SGD4.34 |
| 100 - 245 | SGD0.85 | SGD4.25 |
| 250 - 1245 | SGD0.832 | SGD4.16 |
| 1250 + | SGD0.812 | SGD4.06 |
*price indicative
- RS Stock No.:
- 796-5115
- Mfr. Part No.:
- TPC8125
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TPC | |
| Package Type | SOP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Maximum Power Dissipation Pd | 1.9W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.52mm | |
| Length | 4.9mm | |
| Width | 3.9 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TPC | ||
Package Type SOP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Maximum Power Dissipation Pd 1.9W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.52mm | ||
Length 4.9mm | ||
Width 3.9 mm | ||
Automotive Standard No | ||
MOSFET P-Channel, TPC Series, Toshiba
MOSFET Transistors, Toshiba
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