STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 5 A, 60 V Enhancement, 8-Pin SOIC
- RS Stock No.:
- 795-8868P
- Mfr. Part No.:
- STS5NF60L
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
SGD65.00
(exc. GST)
SGD71.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 01 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | SGD1.30 |
| 100 - 490 | SGD1.261 |
| 500 - 4990 | SGD1.222 |
| 5000 + | SGD1.185 |
*price indicative
- RS Stock No.:
- 795-8868P
- Mfr. Part No.:
- STS5NF60L
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | DeepGate, STripFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.65mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series DeepGate, STripFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.65mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Automotive Standard No | ||
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.