STMicroelectronics STripFET II Type N-Channel MOSFET, 60 A, 60 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 795-6944P
- Mfr. Part No.:
- STB60NF06LT4
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
SGD69.60
(exc. GST)
SGD75.875
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 25 - 95 | SGD2.784 |
| 100 - 245 | SGD2.644 |
| 250 - 495 | SGD2.514 |
| 500 + | SGD2.388 |
*price indicative
- RS Stock No.:
- 795-6944P
- Mfr. Part No.:
- STB60NF06LT4
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | STripFET II | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 14mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Minimum Operating Temperature | -65°C | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 9.35 mm | |
| Height | 4.6mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series STripFET II | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 14mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Minimum Operating Temperature -65°C | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 9.35 mm | ||
Height 4.6mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.