STMicroelectronics DeepGate, STripFET N-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-252 STD80N4F6
- RS Stock No.:
- 791-9308
- Mfr. Part No.:
- STD80N4F6
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD17.67
(exc. GST)
SGD19.26
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 20 | SGD1.767 | SGD17.67 |
| 30 - 40 | SGD1.701 | SGD17.01 |
| 50 + | SGD1.594 | SGD15.94 |
*price indicative
- RS Stock No.:
- 791-9308
- Mfr. Part No.:
- STD80N4F6
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | DeepGate, STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 70W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Width | 6.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series DeepGate, STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 70W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Width 6.2mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics DeepGate 80 A 3-Pin TO-252 STD80N4F6
- STMicroelectronics DeepGate 120 A 3-Pin TO-220
- STMicroelectronics DeepGate 110 A 3-Pin TO-220 STP240N10F7
- STMicroelectronics DeepGate 120 A 3-Pin TO-220 STP260N6F6
- STMicroelectronics DeepGate 110 A 3-Pin H2PAK STH150N10F7-2
- STMicroelectronics DeepGate 5 A 8-Pin SOIC STS5NF60L
- STMicroelectronics STripFET F3 N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 STD65N55F3
- STMicroelectronics STripFET H7 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 STD100N10F7