STMicroelectronics MDmesh K5, SuperMESH5 Type N-Channel MOSFET, 12 A, 800 V Enhancement, 3-Pin TO-220 STP13N80K5
- RS Stock No.:
- 791-7807
- Mfr. Part No.:
- STP13N80K5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD24.99
(exc. GST)
SGD27.24
(inc. GST)
Add 35 units to get free delivery
Temporarily out of stock
- Shipping from 15 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD4.998 | SGD24.99 |
| 50 - 245 | SGD4.75 | SGD23.75 |
| 250 - 495 | SGD4.512 | SGD22.56 |
| 500 - 995 | SGD4.286 | SGD21.43 |
| 1000 + | SGD4.072 | SGD20.36 |
*price indicative
- RS Stock No.:
- 791-7807
- Mfr. Part No.:
- STP13N80K5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | MDmesh K5, SuperMESH5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 450mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Height | 15.75mm | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series MDmesh K5, SuperMESH5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 450mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Height 15.75mm | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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