onsemi NTF Type P-Channel MOSFET, 1.65 A, 20 V Enhancement, 6-Pin TSOP NTGS3441T1G
- RS Stock No.:
- 791-6280
- Mfr. Part No.:
- NTGS3441T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
SGD13.975
(exc. GST)
SGD15.225
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,550 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 50 | SGD0.559 | SGD13.98 |
| 75 - 100 | SGD0.538 | SGD13.45 |
| 125 + | SGD0.504 | SGD12.60 |
*price indicative
- RS Stock No.:
- 791-6280
- Mfr. Part No.:
- NTGS3441T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 1.65A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | TSOP | |
| Series | NTF | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 135mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.2nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.7 mm | |
| Height | 1mm | |
| Length | 3.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 1.65A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type TSOP | ||
Series NTF | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 135mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.2nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.7 mm | ||
Height 1mm | ||
Length 3.1mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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