DiodesZetex DMN Type N-Channel MOSFET, 1.4 A, 12 V Enhancement, 3-Pin X1-DFN DMN1150UFB-7B
- RS Stock No.:
- 790-4583
- Mfr. Part No.:
- DMN1150UFB-7B
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 50 units)*
SGD13.10
(exc. GST)
SGD14.30
(inc. GST)
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In Stock
- Plus 19,000 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | SGD0.262 | SGD13.10 |
| 100 - 200 | SGD0.249 | SGD12.45 |
| 250 - 450 | SGD0.237 | SGD11.85 |
| 500 - 950 | SGD0.225 | SGD11.25 |
| 1000 + | SGD0.214 | SGD10.70 |
*price indicative
- RS Stock No.:
- 790-4583
- Mfr. Part No.:
- DMN1150UFB-7B
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | DMN | |
| Package Type | X1-DFN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.48mm | |
| Width | 0.68 mm | |
| Standards/Approvals | No | |
| Length | 1.08mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series DMN | ||
Package Type X1-DFN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 0.48mm | ||
Width 0.68 mm | ||
Standards/Approvals No | ||
Length 1.08mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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