Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23 SQ2310ES-T1_BE3
- RS Stock No.:
- 787-9443
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD10.64
(exc. GST)
SGD11.60
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Being discontinued
- 20 left, ready to ship from another location
- Final 1,810 unit(s) shipping from 08 June 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.064 | SGD10.64 |
| 20 - 40 | SGD1.019 | SGD10.19 |
| 50 - 90 | SGD0.935 | SGD9.35 |
| 100 - 190 | SGD0.864 | SGD8.64 |
| 200 + | SGD0.828 | SGD8.28 |
*price indicative
- RS Stock No.:
- 787-9443
- Mfr. Part No.:
- SQ2310ES-T1_BE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | SQ Rugged | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS: 2002/95/EC | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series SQ Rugged | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS: 2002/95/EC | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252
- Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay SQ Rugged Type P-Channel MOSFET 12 V Enhancement, 3-Pin SOT-23 SQ2315ES-T1_GE3
- Vishay SQ Rugged Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SQ2301ES-T1-GE3
- Vishay SQ Rugged Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252