Vishay Type N-Channel Power MOSFET, 8.7 A, 500 V Enhancement, 3-Pin TO-220AB
- RS Stock No.:
- 787-9181
- Mfr. Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD10.21
(exc. GST)
SGD11.13
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- 5 left, ready to ship from another location
- Final 10 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD2.042 | SGD10.21 |
| 25 - 95 | SGD2.00 | SGD10.00 |
| 100 + | SGD1.942 | SGD9.71 |
*price indicative
- RS Stock No.:
- 787-9181
- Mfr. Part No.:
- SIHP8N50D-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.85Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 9.01mm | |
| Length | 10.51mm | |
| Width | 4.65 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.85Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 9.01mm | ||
Length 10.51mm | ||
Width 4.65 mm | ||
Automotive Standard No | ||
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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