N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

RS Stock No.:: 787-9014
Mfr. Part No.:: SI4850EY-T1-GE3
Manufacturer:: Vishay

N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

Bulk discount available

Price Each (In a Pack of 5)

SGD2.088

(exc. GST)

SGD2.276

(inc. GST)

2205 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
5 - 20	SGD2.088	SGD10.44
25 - 95	SGD1.944	SGD9.72
100 - 245	SGD1.732	SGD8.66
250 - 495	SGD1.492	SGD7.46
500 +	SGD1.38	SGD6.90

**price indicative

RS Stock No.:: 787-9014
Mfr. Part No.:: SI4850EY-T1-GE3
Manufacturer:: Vishay

Si4850EY, N-Channel Reduced Qg, Fast Switching MOSFET 60V Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	8.5 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	47 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.3 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	18 nC @ 10 V
Width	4mm
Length	5mm
Maximum Operating Temperature	+150 °C
Height	1.5mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 8.5 A, 60 V, 8-Pin SOIC Vishay SI4850EY-T1-GE3

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

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