onsemi Type P-Channel MOSFET, 1.37 A, 20 V Enhancement, 3-Pin SC-70 NTS4101PT1G
- RS Stock No.:
- 780-4767
- Mfr. Part No.:
- NTS4101PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 50 units)*
SGD9.70
(exc. GST)
SGD10.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- Plus 5,300 left, shipping from 05 January 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 50 | SGD0.194 | SGD9.70 |
| 100 - 200 | SGD0.19 | SGD9.50 |
| 250 - 450 | SGD0.184 | SGD9.20 |
| 500 - 950 | SGD0.179 | SGD8.95 |
| 1000 + | SGD0.173 | SGD8.65 |
*price indicative
- RS Stock No.:
- 780-4767
- Mfr. Part No.:
- NTS4101PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.37A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 160mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.4nC | |
| Maximum Power Dissipation Pd | 329mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.37A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 160mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.4nC | ||
Maximum Power Dissipation Pd 329mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
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