STMicroelectronics STripFET II Type N-Channel MOSFET, 80 A, 100 V Enhancement, 3-Pin TO-220 STP60NF10
- RS Stock No.:
- 761-0159
- Mfr. Part No.:
- STP60NF10
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
SGD19.55
(exc. GST)
SGD21.30
(inc. GST)
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In Stock
- Plus 35 unit(s) shipping from 29 December 2025
- Plus 735 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.91 | SGD19.55 |
| 25 - 95 | SGD3.172 | SGD15.86 |
| 100 - 245 | SGD3.166 | SGD15.83 |
| 250 - 495 | SGD2.52 | SGD12.60 |
| 500 + | SGD2.406 | SGD12.03 |
*price indicative
- RS Stock No.:
- 761-0159
- Mfr. Part No.:
- STP60NF10
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | STripFET II | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 15.75mm | |
| Width | 4.6 mm | |
| Length | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series STripFET II | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 15.75mm | ||
Width 4.6 mm | ||
Length 10.4mm | ||
Automotive Standard No | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Related links
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