onsemi PowerTrench N-Channel MOSFET, 50 A, 250 V Enhancement, 3-Pin TO-263 FDB2710
- RS Stock No.:
- 759-8961
- Mfr. Part No.:
- FDB2710
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD9.01
(exc. GST)
SGD9.82
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 682 unit(s) shipping from 14 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD9.01 |
| 10 - 49 | SGD8.82 |
| 50 - 99 | SGD8.54 |
| 100 - 249 | SGD8.28 |
| 250 + | SGD8.02 |
*price indicative
- RS Stock No.:
- 759-8961
- Mfr. Part No.:
- FDB2710
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 42mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 78nC | |
| Maximum Power Dissipation Pd | 260W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 11.33mm | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 42mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 78nC | ||
Maximum Power Dissipation Pd 260W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 11.33mm | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, 20A to 59.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi PowerTrench Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220
- onsemi PowerTrench Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-220 FDP2710
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 FDD86540
- onsemi PowerTrench Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- onsemi PowerTrench Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263