N-Channel MOSFET, 2.6 A, 60 V, 3-Pin SOT-223 Infineon BSP318SH6327XTSA1
- RS Stock No.:
- 753-2816P
- Mfr. Part No.:
- BSP318SH6327XTSA1
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 03/05/2024, delivery within 4 working days from despatch date
Added
Price Each (Supplied on a Reel) Quantities below 150 on continuous strip
SGD0.97
(exc. GST)
SGD1.06
(inc. GST)
| Units | Per unit |
| 50 - 240 | SGD0.97 |
| 250 - 490 | SGD0.951 |
| 500 - 2490 | SGD0.933 |
| 2500 + | SGD0.768 |
- RS Stock No.:
- 753-2816P
- Mfr. Part No.:
- BSP318SH6327XTSA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.6 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-223 |
| Series | SIPMOS |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 150 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Width | 3.5mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Transistor Material | Si |
| Length | 6.5mm |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |