DiodesZetex Type P-Channel MOSFET, 9.9 A, 40 V Enhancement, 3-Pin TO-252 ZXMP4A16KTC
- RS Stock No.:
- 751-5379
- Mfr. Part No.:
- ZXMP4A16KTC
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD6.04
(exc. GST)
SGD6.585
(inc. GST)
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In Stock
- 40 unit(s) ready to ship from another location
- Plus 390 unit(s) shipping from 07 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.208 | SGD6.04 |
| 25 - 95 | SGD1.172 | SGD5.86 |
| 100 - 245 | SGD1.13 | SGD5.65 |
| 250 - 495 | SGD1.088 | SGD5.44 |
| 500 + | SGD0.986 | SGD4.93 |
*price indicative
- RS Stock No.:
- 751-5379
- Mfr. Part No.:
- ZXMP4A16KTC
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 9.9A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 29.6nC | |
| Maximum Power Dissipation Pd | 9.5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.89V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.22 mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 9.9A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 29.6nC | ||
Maximum Power Dissipation Pd 9.5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.89V | ||
Maximum Operating Temperature 150°C | ||
Width 6.22 mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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