DiodesZetex ZXMP10A18K Type P-Channel MOSFET, 5.9 A, 100 V Enhancement, 3-Pin TO-252 ZXMP10A18KTC
- RS Stock No.:
- 751-5360
- Mfr. Part No.:
- ZXMP10A18KTC
- Manufacturer:
- DiodesZetex
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 5 units)*
SGD11.25
(exc. GST)
SGD12.25
(inc. GST)
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Temporarily out of stock
- 17,160 unit(s) shipping from 02 November 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD2.25 | SGD11.25 |
| 25 - 95 | SGD2.208 | SGD11.04 |
| 100 - 245 | SGD2.144 | SGD10.72 |
| 250 - 495 | SGD2.08 | SGD10.40 |
| 500 + | SGD2.016 | SGD10.08 |
*price indicative
- RS Stock No.:
- 751-5360
- Mfr. Part No.:
- ZXMP10A18KTC
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | ZXMP10A18K | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 10.2W | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 26.9nC | |
| Forward Voltage Vf | -0.85V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series ZXMP10A18K | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 10.2W | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 26.9nC | ||
Forward Voltage Vf -0.85V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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