DiodesZetex DMN Type N-Channel MOSFET, 14.4 A, 30 V Enhancement, 3-Pin TO-252 DMN3024LK3-13
- RS Stock No.:
- 751-4161
- Mfr. Part No.:
- DMN3024LK3-13
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
SGD16.875
(exc. GST)
SGD18.40
(inc. GST)
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Temporarily out of stock
- Shipping from 15 December 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 25 | SGD0.675 | SGD16.88 |
| 50 - 100 | SGD0.652 | SGD16.30 |
| 125 - 225 | SGD0.628 | SGD15.70 |
| 250 - 475 | SGD0.602 | SGD15.05 |
| 500 + | SGD0.584 | SGD14.60 |
*price indicative
- RS Stock No.:
- 751-4161
- Mfr. Part No.:
- DMN3024LK3-13
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 39mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 12.9nC | |
| Forward Voltage Vf | -1.5V | |
| Maximum Power Dissipation Pd | 8.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 39mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 12.9nC | ||
Forward Voltage Vf -1.5V | ||
Maximum Power Dissipation Pd 8.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 2.39mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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