DiodesZetex DMG1013UW Type P-Channel MOSFET, 820 mA, 20 V Enhancement, 3-Pin SC-70 DMG1013UW-7
- RS Stock No.:
- 751-4070
- Mfr. Part No.:
- DMG1013UW-7
- Manufacturer:
- DiodesZetex
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Bulk discount available
Subtotal (1 pack of 100 units)*
SGD9.60
(exc. GST)
SGD10.50
(inc. GST)
Add 1700 units to get free delivery
In Stock
- 1,200 unit(s) ready to ship from another location
- Plus 201,200 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 100 | SGD0.096 | SGD9.60 |
| 200 - 400 | SGD0.094 | SGD9.40 |
| 500 - 900 | SGD0.092 | SGD9.20 |
| 1000 - 4900 | SGD0.09 | SGD9.00 |
| 5000 + | SGD0.074 | SGD7.40 |
*price indicative
- RS Stock No.:
- 751-4070
- Mfr. Part No.:
- DMG1013UW-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 820mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | DMG1013UW | |
| Package Type | SC-70 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 310mW | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 0.62nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 820mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series DMG1013UW | ||
Package Type SC-70 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 310mW | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 0.62nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Height 1mm | ||
Width 1.35 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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