Vishay Si4162DY Type N-Channel MOSFET, 13.6 A, 30 V Enhancement, 8-Pin SOIC SI4162DY-T1-GE3
- RS Stock No.:
- 710-3323
- Mfr. Part No.:
- SI4162DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD7.22
(exc. GST)
SGD7.87
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 18 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD1.444 | SGD7.22 |
| 15 - 20 | SGD1.392 | SGD6.96 |
| 25 + | SGD1.306 | SGD6.53 |
*price indicative
- RS Stock No.:
- 710-3323
- Mfr. Part No.:
- SI4162DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOIC | |
| Series | Si4162DY | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOIC | ||
Series Si4162DY | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Width 4 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay Si4162DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8
- Vishay Type P-Channel MOSFET -30 V Enhancement, 8-Pin SO-8 SI4155DY-T1-GE3
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC IRF7821TRPBF
- Vishay ThunderFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC
- Vishay Si4134DY Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- Vishay Si4190ADY Type N-Channel MOSFET 100 V Enhancement, 8-Pin SOIC